Next Generation Thin Films for Photovoltaics: InGaAsN
Technical Report
·
OSTI ID:6350726
A new semiconductor alloy system, InGaAsN, has been identified as a can- didate material for multi junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen ( 2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content With the appropriate ratio of indium to nitrogen concentrations, InGaAsN can be lattice matched to GaAs.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 6350726
- Report Number(s):
- SAND99-1534J; ON: DE00007867
- Country of Publication:
- United States
- Language:
- English
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