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InGaAsN/GaAs heterojunction for multi-junction solar cells

Patent ·
OSTI ID:873812
 [1];  [1];  [1];  [2]
  1. Albuquerque, NM
  2. Edgewood, NM
+ Show Author Affiliations

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6252287
OSTI ID:
873812
Country of Publication:
United States
Language:
English

References (12)

GaInNAs: a novel material for long-wavelength semiconductor lasers journal June 1997
GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy journal May 1998
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance journal February 1996
Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes journal September 1998
Raman studies of nitrogen incorporation in GaAs1−xNx journal September 1998
GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy journal January 1998
InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs journal February 1999
Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition journal May 1997
Experimental results of GaInP/sub 2//GaAs/Ge triple junction cell development for space power systems conference January 1996
A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers journal November 1997
29.5%‐efficient GaInP/GaAs tandem solar cells journal August 1994
Projected performance of three- and four-junction devices using GaAs and GaInP conference January 1997

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Related Subjects

/257/136/
04
1-x
1-y
62
70
95-1
alloy
alloy composition
application
arsenide
bandgap
beam
beam epitaxy
cells
chemical
chemical vapor
circuit voltage
composition
deposition
disclosed
efficiency
epitaxially
epitaxially growing
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gaas
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gallium
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indium
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ingaasn
internal
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lattice-matched
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ltoreq
metalorganic
metalorganic chemical
mocvd
molecular
molecular beam
multi-junction
multi-junction solar
n-type
nitride
open-circuit
organic chemical
p-n
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quantum
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semiconductor
semiconductor alloy
solar
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