AlGaN Materials Engineering for Integrated Multi-Function Systems

Technical Report · Mon Jan 01 04:00:00 EST 2001

DOI:https://doi.org/10.2172/780286· OSTI ID:780286

HAN, JUNG ^[1]; MITCHELL, CHRISTINE C; WALDRIP, KAREN NMN; GUILINGER, TERRY R; KELLY, MICHAEL J; FLEMING, JAMES G; TSAO, SYLVIA SANTA INES; FOLLSTAEDT, DAVID M; WAMPLER, WILLIAM R; LEE, STEPHEN R; CASALNUOVO, STEPHEN A; MANI, SEETHAMBAL S

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1. Sandia National Laboratories

This LDRD is aimed to place Sandia at the forefront of GaN-based technologies. Two important themes of this LDRD are: (1) The demonstration of novel GaN-based devices which have not yet been much explored and yet are coherent with Sandia's and DOE's mission objectives. UV optoelectronic and piezoelectric devices are just two examples. (2) To demonstrate front-end monolithic integration of GaN with Si-based microelectronics. Key issues pertinent to the successful completion of this LDRD have been identified to be (1) The growth and defect control of AlGaN and GaN, and (2) strain relief during/after the heteroepitaxy of GaN on Si and the separation/transfer of GaN layers to different wafer templates.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 780286
• Report Number(s): SAND2001-0133
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALGAN
ALUMINIUM NITRIDES
DEFECTS
EPITAXIAL GROWTH
EPITAXY
GALLIUM NITRIDES
GAN
MICROELECTRONICS
MOCVD
MOVPE
PIEZOELECTRICITY
POROUS GAN
POROUS SI
SILICON
STRAIN ENGINEERING
ULTRAVIOLET RADIATION
WIDE BANDGAP SEMICONDUCTORS