Recent progress in AlGaN/GaN based optoelectronic devices

Book · Thu Oct 31 23:00:00 EST 1996

OSTI ID:395047

Khan, M A; Chen, Q; Sun, C J; Yang, J W ^[1]; Shur, M S ^[2]

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1. APA Optics, Inc., Blaine, MN (United States)
2. Univ. of Virginia, Charlottesville, VA (United States). Dept. of Electrical Engineering

The authors review the recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectronic integrated circuits operating in visible and ultraviolet range.

• OSTI ID: 395047
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
AMMONIA
CHEMICAL VAPOR DEPOSITION
COMPOSITE MATERIALS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM NITRIDES
INDIUM NITRIDES
LIGHT EMITTING DIODES
OPTICAL PROPERTIES
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
SAPPHIRE
SUBSTRATES
TRANSISTORS
ULTRAVIOLET SPECTRA