GaN High Power Devices

Conference · Mon Jul 17 00:00:00 EDT 2000

OSTI ID:761448

PEARTON, S J ^[1]; REN, F; ZHANG, A P; DANG, G; CAO, X A; LEE, K P; CHO, H; GILA, B P; JOHNSON, J W; MONIER, C; ABERNATHY, C R; HAN, JUNG; BACA, ALBERT G; CHYI, J -I; LEE, C -M; NEE, T -E; CHUO, C -C; CHI, G C; CHU, S N.G.

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1. Sandia National Laboratories

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 761448
• Report Number(s): SAND2000-1869C
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HETEROJUNCTIONS
PERFORMANCE
RECTIFIERS
TRANSISTORS