Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
Journal Article
·
· MRS Internet Journal of Nitride Semiconductor Research
OSTI ID:3209
- Sandia National Laboratories
The grown-in tensile strain, due to a lattice mismatch between AlGaN and GaN, is responsible for the observed cracking that seriously limits the feasibility of nitride-based ultraviolet (UV) emitters. We report in-situ monitoring of strain/stress during MOCVD of AlGaN based on a wafer-curvature measurement technique. The strain/stress measurement confirms the presence of tensile strain during growth of AlGaN pseudomorphically on a thick GaN layer. Further growth leads to the onset of stress relief through crack generation. We find that the growth of AlGaN directly on low-temperature (LT) GaN or AlN buffer layers results in a reduced and possibly controllable strain.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 3209
- Report Number(s):
- SAND99-0095J
- Journal Information:
- MRS Internet Journal of Nitride Semiconductor Research, Journal Name: MRS Internet Journal of Nitride Semiconductor Research Vol. 4S1; ISSN MIJNF7; ISSN 1092-5783
- Country of Publication:
- United States
- Language:
- English
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