P-type GaSb and GaInSb Layers Grown By Metalorganic Vapor Phase Epitaxy Using Silane as the Dopant Source
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY (United States)
P-type GaSb and GaInSb layers were grown on GaAs substrates by the low pressure metalorganic vapor phase epitaxy (MOVPE) technique, using silane as the dopant source. It was found that Si is a well behaved p-type ,dopant in GaSb and GaInSb compounds. Secondary ion mass spectrometry (SIMS) measurements and Van der Pauw Hall measurements indicated that the compensation ratio (defined as $$\frac {N_a-N_d}{N_a+N_d}$$) of $$2x10^{18} cm^{-3}$$ doped p-type GaInSb layer is higher than 0.75, whereas the compensation ratio is higher than 0.9 for layers doped to $$<5x10^{17}cm^{-3}$$. Control of p-type doping level in the mid $$10^{16}cm^{-3}$$ - mid $$10^{18}cm^{-3}$$ range has been demonstrated. The effects of TMSb mole fraction and the growth temperature on the Si incorporation behavior were also studied.
- Research Organization:
- Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 767068
- Report Number(s):
- KAPL-P-000221
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy
P-type and N-type doping in GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy