Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy

Technical Report · Sat Jul 01 04:00:00 EDT 1995

DOI:https://doi.org/10.2172/350941· OSTI ID:350941

Ehsani, H; Bhat, I; Hitchcock, C; Borrego, J; Gutmann, R ^[1]

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1. Rensselaer Polytechnic Inst., Troy, NY (United States)

GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase epitaxy (MOVPE) with trimethylgallium, trimethylindium and trimethylantimony as the sources. As grown layers are p type with the carrier concentration in the mid 10{sup 16} cm{sup {minus}3} range. N type layers are grown using diethyltellurium as the Te source. Incorporation of Te in high concentration showed compensation and secondary ion mass spectrometry (SIMS) result showed that only 2.5% of Te are active when 2 {times} 10{sup 19} cm{sup {minus}3} of Te was incorporated. The carrier concentration measured in n type samples increases as the temperature is lowered. This is explained by the presence of second band close to the conduction band minima. Silane which is a common n type dopant in GaAs and other III-V systems is shown to behave like p type in GaInSb. P-n junction structures have been grown on GaSb substrates to fabricate TPV cells.

• Research Organization: Knolls Atomic Power Lab., Schenectady, NY (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
• DOE Contract Number: AC12-76SN00052
• OSTI ID: 350941
• Report Number(s): KAPL-P--000010; K--95085; CONF-9507247--; ON: DE99002688
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
36 MATERIALS SCIENCE
CARRIER DENSITY
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ANTIMONIDES
INDIUM ANTIMONIDES
P-N JUNCTIONS
TELLURIUM
THERMOPHOTOVOLTAIC CONVERTERS
VAPOR PHASE EPITAXY