Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy

Journal Article · Thu Feb 01 04:00:00 EST 1996 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.49703· OSTI ID:285315

Ehsani, H; Bhat, I; Hitchcock, C; Borrego, J; Gutmann, R ^[1]

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1. Center for Integrated Electronics and Electronics Manufacturing, Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)

GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase epitaxy (MOVPE) with trimethylgallium, trimethylindium, and trimethylantimony as the sources. As grown layers were {ital p}-type with the carrier concentration in the mid-10{sup 16} cm{sup {minus}3} range. {ital N}-type layers were grown using diethyltellurium as the Te source. Incorporation of Te in high concentration showed compensation and secondary ion mass spectrometry (SIMS) result showed that only 2.5{percent} of Te are active when 2{times}10{sup 19} cm{sup {minus}3} of Te was incorporated. The carrier concentration measured in {ital n}-type samples increased as the temperature is lowered. This is explained by the presence of second band close to the conduction band minima. Silane, which is a common {ital n}-type dopant in GaAs and other III{endash}V systems, is shown to behave like {ital p}-type in GaInSb-. {ital P}-{ital n} junction structures have been grown on GaSb substrates to fabricate TPV cells. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 285315
• Report Number(s): CONF-9507247--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 358; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CARRIER DENSITY
CRYSTAL GROWTH
EPITAXY
GALLIUM ANTIMONIDES
GROWTH RATE
HALL EFFECT
INDIUM ANTIMONIDES
TEMPERATURE DEPENDENCE
THERMOPHOTOVOLTAIC CONVERTERS
VPE