P-type and N-type doping in GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Lockheed Martin Corp., Schenectady, NY (United States)
P-type and n-type GaSb and GA{sub 0.8}In{sub 0.2}Sb layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using silane and diethyltellurium (DETe) as the dopant precursors, respectively. Hall measurements show that the concentration and mobility of holes and electrons in GaSb and GA{sub 0.8}In{sub 0.2}Sb are higher when the layers are grown on GaSb substrates than when grown on GaAs substrates. Secondary ion mass spectrometry (SIMS) results show that the incorporation of Si and Te is higher when GaSb substrates are used. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electron concentration decreased, with only about 1% of the Te electrically active at a Te concentration of 2 {times} 10{sup 20} cm{sup {minus}3}.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 307980
- Report Number(s):
- KAPL-P-000101; K-98121; CONF-9805146-; ON: DE99001632; TRN: AHC29905%%158
- Resource Relation:
- Conference: 9. international conference on MOVPE, La Jolla, CA (United States), 30 May - 4 Jun 1998; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
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