Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Lockheed Martin Inc., Schenectady, NY (United States)
In{sub 0.2}Ga{sub 0.8}Sb epitaxial layers and thermophotovoltaic (TPV) device structures have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE). Control of the n-type doping up to 1 {times} 10{sup 18} cm{sup {minus}3} was achieved using diethyltellurium (DETE) as the dopant source. A Hall mobility of greater than 8,000 cm{sup 2}/Vs at 77 K was obtained for a 3 {times} 10{sup 17} cm{sup {minus}3} doped In{sub 0.2}Ga{sub 0.8}Sb layer grown on high-resistivity GaSb substrate. The In{sub 0.2}Ga{sub 0.8}Sb epilayers directly grown on GaSb substrates were tilted with respect to the substrates, with the amount of tilt increasing with the layer thickness. Transmission electron microscopy (TEM) studies of the layers showed the presence of dislocation networks across the epilayers parallel to the interface at different distances from the interface, but the layers above this dislocation network were virtually free of dislocations. A strong correlation between epilayer tilt and TPV device properties was found, with layers having more tilt providing better devices. The results suggest that the dislocations moving parallel to the interface cause lattice tilt, and control of this layer tilt may enable the fabrication of better quality device structures.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 319849
- Report Number(s):
- KAPL-P-000173; K-97057; CONF-9705119-; ON: DE99001907; TRN: AHC29909%%123
- Resource Relation:
- Conference: 3. NREL conference on thermophotovoltaic (TPV) generation of electricity, Colorado Springs, CO (United States), 18-21 May 1997; Other Information: PBD: May 1997
- Country of Publication:
- United States
- Language:
- English
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