Growth and characterization of In{sub 0.2}Ga{sub 0.8}Sb device structures using metalorganic vapor phase epitaxy
- Department of Electrical, Computer and Systems Engineering, Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
- Lockheed Martin Inc., Schenectady, New York 12301-1072 (United States)
In{sub 0.2}Ga{sub 0.8}Sb epitaxial layers and thermophotovoltaic (TPV) device structures have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE). Control of the n-type doping up to 1{times}10{sup 18}cm{sup {minus}3} was achieved using diethyltellurium (DETe) as the dopant source. A Hall mobility of greater than 8000cm{sup 2}/Vs at 77K was obtained for a 3{times}10{sup 17}cm{sup {minus}3} doped In{sub 0.2}Ga{sub 0.8}Sb layer grown on high-resistivity GaSb substrate. The In{sub 0.2}Ga{sub 0.8}Sb epilayers directly grown on GaSb substrates were tilted with respect to the substrates, with the amount of tilt increasing with the layer thickness. Transmission electron microscopy (TEM) studies of the layers showed the presence of dislocation networks across the epilayers parallel to the interface at different distances from the interface, but the layers above this dislocation network were virtually free of dislocations. A strong correlation between epilayer tilt and TPV device properties was found, with layers having more tilt providing better devices. The results suggest that the dislocations moving parallel to the interface cause lattice tilt, and control of this layer tilt may enable the fabrication of better quality device structures. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 575618
- Report Number(s):
- CONF-9705119--
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 401; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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