Tellurium doping of Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Lockheed Martin Corp., Schenectady, NY (United States)
N-type Ga{sub 0.8}In{sub 0.2}Sb epitaxial layers have been grown on GaSb and GaAs substrates by metalorganic vapor phase epitaxy (MOVPE) using diethyltelluride (DETe) as the dopant source. The incorporation efficiency of Te in Ga{sub 0.8}In{sub 0.2}Sb and the electron mobility were found to be higher with GaSb substrates compared to using GaAs substrates. The electron concentration increased from 5 {times} 10{sup 16} cm{sup {minus}3} to 1.5 {times} 10{sup 18} cm{sup {minus}3} as the Te concentration was increased from 1 {times} 10{sup 17} cm{sup {minus}3} to 5 {times} 10{sup 18} cm{sup {minus}3}. As the Te concentration was increased further, the electron concentration decreased, with only about 1% of the Te electrically active at a Te concentration of 2 {times} 10{sup 20} cm{sup {minus}3}.
- Research Organization:
- Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 307974
- Report Number(s):
- KAPL-P-000085; K-98075; CONF-9805146-; ON: DE99001570; TRN: AHC29905%%152
- Resource Relation:
- Conference: 9. international conference on MOVPE, La Jolla, CA (United States), 30 May - 4 Jun 1998; Other Information: PBD: Jun 1998
- Country of Publication:
- United States
- Language:
- English
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