Steady State Properties of Lock-On Current Filaments in GaAs
- Sandia National Laboratories
Collective impact ionization has been used to explain lock-on in semi-insulating GaAs under high-voltage bias. The authors have used this theory to study some of the steady state properties of lock-on current filaments. In steady state, the heat gained from the field is exactly compensated by the cooling due to phonon scattering. In the simplest approximation, the carrier distribution approaches a quasi-equilibrium Maxwell-Boltzmann distribution. In this report they examine the validity of this approximation. They find that this approximation leads to a filament carrier density which is much lower than the high density needed to achieve a quasiequilibrium distribution. Further work on this subject is in progress.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 752060
- Report Number(s):
- SAND2000-0511J
- Journal Information:
- IEEE Transactions on Plasma Science, Journal Name: IEEE Transactions on Plasma Science; ISSN ITPSBD; ISSN 0093-3813
- Country of Publication:
- United States
- Language:
- English
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