An impact ionization model for optically-triggered current filaments in GaAs
- and others
A new impact ionization theory is proposed for current filaments in optically triggered semi-insulating (SI) GaAs switches. The theory explains the rapid switching and lock-on voltage observed in these switches in terms of hot carriers which become more effective at impact ionization at higher carrier densities. The theory is implemented by hydrodynamic transport equations which include kinetic terms for hot carriers and hot phonons. The solutions of these equations are in good agreement with current versus voltage data for optically triggered GaAs switches.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 434472
- Report Number(s):
- SAND--93-3972; ON: DE97002711
- Country of Publication:
- United States
- Language:
- English
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