A thermal ionization model for the sustaining phase of lock-on in GaAs
Conference
·
OSTI ID:10148953
Thermal ionization of electrons and holes is proposed as an explanation for the sustained phase of lock-on in semi-insulating GaAs. In this mechanism, thermal ionization leads to a current instability which drives the formation of current filaments. The model predicts bistable states: either a highly conductive on-state or weakly conductive off-state. The model predicts that a transition from the off-state to a filamentary-current on-state can be triggered by illumination in agreement with experiments using photoexcitation.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10148953
- Report Number(s):
- SAND--92-2857C; CONF-930159--28; ON: DE93011558
- Country of Publication:
- United States
- Language:
- English
Similar Records
A thermal ionization model for the sustaining phase of lock-on in GaAs
An impact ionization model for optically-triggered current filaments in GaAs
Steady State Properties of Lock-On Current Filaments in GaAs
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:6854922
An impact ionization model for optically-triggered current filaments in GaAs
Technical Report
·
Sat Nov 30 23:00:00 EST 1996
·
OSTI ID:434472
Steady State Properties of Lock-On Current Filaments in GaAs
Journal Article
·
Mon Feb 28 23:00:00 EST 2000
· IEEE Transactions on Plasma Science
·
OSTI ID:752060