A thermal ionization model for the sustaining phase of lock-on in GaAs
Conference
·
OSTI ID:6854922
Thermal ionization of electrons and holes is proposed as an explanation for the sustained phase of lock-on in semi-insulating GaAs. In this mechanism, thermal ionization leads to a current instability which drives the formation of current filaments. The model predicts bistable states: either a highly conductive on-state or weakly conductive off-state. The model predicts that a transition from the off-state to a filamentary-current on-state can be triggered by illumination in agreement with experiments using photoexcitation.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6854922
- Report Number(s):
- SAND-92-2857C; CONF-930159--28; ON: DE93011558
- Country of Publication:
- United States
- Language:
- English
Similar Records
A thermal ionization model for the sustaining phase of lock-on in GaAs
An impact ionization model for optically-triggered current filaments in GaAs
Steady State Properties of Lock-On Current Filaments in GaAs
Conference
·
Wed Dec 30 23:00:00 EST 1992
·
OSTI ID:10148953
An impact ionization model for optically-triggered current filaments in GaAs
Technical Report
·
Sat Nov 30 23:00:00 EST 1996
·
OSTI ID:434472
Steady State Properties of Lock-On Current Filaments in GaAs
Journal Article
·
Mon Feb 28 23:00:00 EST 2000
· IEEE Transactions on Plasma Science
·
OSTI ID:752060
Related Subjects
36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FILAMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEATING
IONIZATION
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES
360606* -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FILAMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEATING
IONIZATION
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SWITCHES