Resist performance in soft x-ray projection lithography

Conference · Fri Jan 01 04:00:00 EST 1993

OSTI ID:7368549

Kubiak, G D; Tichenor, D A ^[1]; Chow, W W; Sweatt, W C ^[2]; Himel, M D ^[3]

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1. Sandia National Labs., Livermore, CA (United States)
2. Sandia National Labs., Albuquerque, NM (United States)
3. AT and T Bell Labs., Holmdel, NJ (United States)

An important issue for resists used in soft x-ray projection lithography (SXPL) is high absorption. Absorption coefficients of both organic and inorganic formulations range from 2--6 [mu]m[sup [minus]1], requiring the use of very thin (50--100 nm) layers to avoid excessive absorption and resulting pattern sidewall degradation. Such thin films are typically used as the imaging layer in a bi- or tri-level processing scheme to achieve the required pattern depth. In this work, we report experimental and theoretical studies of imaging performance in the resists PMMA and SAL 601 at an SXPL exposure wavelength of 13.9 nm. Absorption coefficients (([alpha]) have been measured for, and SXPL images recorded in both of these resists. A Mo/Si multilayer-coated Schwarzschild objective having known aberrations and illuminated by a laser plasma soft x-ray source has been used to produce images. Calculated aberrated aerial images are used in conjunction with the measured values of ([alpha] to model the expected resist profiles and these are compared to experiment. Imaging performance as a function of resist absorption and estimates of resist exposure latitude are also discussed.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; DOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7368549
• Report Number(s): SAND-93-8541C; CONF-9302130--1; ON: DE93016490
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ABSORPTION
COATINGS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELECTRONIC CIRCUITS
ELEMENTS
ENERGY ABSORPTION
ESTERS
FABRICATION
IMAGES
INTEGRATED CIRCUITS
IONIZING RADIATIONS
METALS
MICROELECTRONIC CIRCUITS
MICROSCOPY
MOLYBDENUM
OPTICAL SYSTEMS
ORGANIC COMPOUNDS
ORGANIC POLYMERS
PMMA
POLYACRYLATES
POLYMERS
POLYVINYLS
RADIATIONS
SCANNING ELECTRON MICROSCOPY
SEMIMETALS
SILICON
SOFT X RADIATION
SORPTION
TRANSITION ELEMENTS
X RADIATION