Chemically amplified soft-x-ray resists: sensitivity, resolution, and molecular photodesorption

Journal Article · Wed Dec 01 04:00:00 EST 1993 · Applied Optics; (United States)

DOI:https://doi.org/10.1364/AO.32.007036· OSTI ID:5340780

Kubiak, G D; Hwang, R Q; Schulberg, M T; Tichenor, D A ^[1]; Early, K ^[2]

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1. Sandia National Laboratories, P.O. Box 969 Livermore, California 94551-0969 (United States)
2. AT T Bell Laboratories, Crawfords Corner Road, P.O. Box 3030 Holmdel, New Jersey 07733-3030 (United States)

The sensitivity, ion photodesorption, and lithographic performance of selected novolac-based chemically amplified resists have been studied at an exposure wavelength of 140 A. Flood exposures of the resits AZ PF514, AZ PN114, and SAL 601 yield [ital D][sub 0.9] values of 2.5--3.5 mJ/cm[sup 2] for 0.25-[mu]m-thick films. Contrast values range from 3 for AZ PN114 to 5 for SAL 601. Photodesorption of fragment ions induced by 140-A radiation has been examined in AZ PN114 by using time-of-flight mass spectrometry and compared with poly(methylmethacrylate) (PMMA). Mass-integrated ion desorption yields from AZ PN114 are found to be [similar to]90 times less per exposure than from PMMA. Soft-x-ray projection imaging in AZ PF514 and SAL 601 has been characterized by use of a multilayer-coated 20[times] Schwarzschild objective and a transmissive Ge/Si mask illuminated by a laser plasma source.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5340780
• Journal Information: Applied Optics; (United States), Journal Name: Applied Optics; (United States) Vol. 32:34; ISSN APOPAI; ISSN 0003-6935
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
DESORPTION
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
FABRICATION
IMAGES
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
RADIATIONS
SOFT X RADIATION
SORPTION
X RADIATION