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Characterization of chemically amplified resists for soft x-ray projection lithography

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:6347098
; ; ; ;  [1]; ;  [2]
  1. Sandia National Labs., Livermore, CA (United States)
  2. AT T Bell Labs., Holmdel, NJ (United States)
Sensitivity, lithographic performance, photoabsorption, and photodesorption of chemically amplified novolac-based resists have been studied at an exposure wavelength of 140 [angstrom] and are compared to poly(methylmethacrylate) (PMMA). Monochromatic exposures of the resists AZ PF514, AZ PN114, and SAL 601 yielded D[sub 1.9] values of 2.5-3 mJ/cm[sup 2] for 0.25 [mu]m thick films. Contrast values ranged from 3 for AZ PN114 to 5 for SAL 601. Photoabsorption measurements of supported AZ PN114 films at 140 [angstrom] yield an absorption coefficient of 4.4[+-]0.1 [mu]m[sup [minus]1]. Photodesorption of fragment ions induced by 140[angstrom] radiation has been studied in PMMA and AZ PN114 using time-of-flight mass spectrometry. It is found that H[sup +], CH[sub 2][sup +], CH[sub 3][sup +], H[sub 2]O[sup +], CHO[sup +], C[sub 3]H[sub 5][sup +], and COOCH[sub 3+][sup +] dominate the ion mass spectra photodesorbed from PMMA, while H[sup +], CH[sub 3][sup +], H[sub 2]O[sup +], and CHO[sup +] dominate the ion mass spectra for AZ PN114. The mass-integrated ion desorption yield from AZ PN114 is three times less than that measured for PMMA per photon or 90 times less when expressed per exposure. Lithographic performance of AZ PF514 and SAL 601 has been characterized using a multilayer-coated 20X Schwarzschild objective and a transmissive Ge/Si mask illuminated by a laser plasma source. 19 refs., 8 figs.
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6347098
Report Number(s):
CONF-920575--
Conference Information:
Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 10:6
Country of Publication:
United States
Language:
English