Characterization of GaAs substrates and epitaxial GaAs/sub 1-x/P/sub x/ layers by divergent x-ray beam diffraction

Journal Article · Wed Jan 01 04:00:00 EST 1975 · J. Electron. Mater.; (United States)

DOI:https://doi.org/10.1007/BF02657841· OSTI ID:7355371

Donaghey, L F; Bissinger, R H

The application of the divergent x-ray beam diffraction method was studied for characterizing lattice imperfections, lattice parameters and composition variations and lattice strain in GaAs substrates and in GaAs/sub 1-x/P/sub x/ epitaxial layers. Reflection conics from (117), (026), (155), and (004) planes predominate in pseudo-Kossel back reflection patterns obtained from samples with (001) orientations. The sensitivity of pseudo-Kossel line displacements is assessed for lattice parameter and anisotropic strain distortion measurements. The lattice parameter of GaAs was determined to be 5.6435 A. Moseic subgrain misorientations in GaAs/sub 1-x/P/sub x/ epitaxial layers were found to be relatively independent of graded layer composition gradients, whereas homogeneous stress distortion was more strongly dependent. (auth)

• Research Organization: Univ. of California, Berkeley
• OSTI ID: 7355371
• Journal Information: J. Electron. Mater.; (United States), Journal Name: J. Electron. Mater.; (United States) Vol. 4:1; ISSN JECMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
LATTICE PARAMETERS
LAYERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
STRAINS
SUBSTRATES
X-RAY DIFFRACTION