Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x
- Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309 (United States)
- Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (United States)
Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAs{sub 1{minus}{ital x}}P{sub {ital x}} buffer. The lattice-mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electron-spin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial-layer thicknesses varying from 0.1 to 0.3 {mu}m and the phosphorus concentration {ital x} varying from 0.21 to 0.28. Electron-spin polarization as high as 90% has been observed. The 0.3-{mu}m-thick sample, well in excess of theoretical estimates for the critical thickness for pseudomorphic growth, reaches an electron-spin polarization of 80%, demonstrating a significant persistence of lattice strain.
- DOE Contract Number:
- AC03-76SF00515; AC02-76ER00881
- OSTI ID:
- 7164043
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Vol. 46:7; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
PHOTOEMISSION
DISLOCATIONS
HETEROJUNCTIONS
POLARIZATION
SPIN ORIENTATION
STRAINS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
EMISSION
GALLIUM COMPOUNDS
JUNCTIONS
LINE DEFECTS
ORIENTATION
PNICTIDES
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
360606* - Other Materials- Physical Properties- (1992-)