Electron-spin polarization in photoemission from strained GaAs grown on GaAs sub 1 minus x P sub x

Journal Article · Sat Aug 15 04:00:00 EDT 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.46.4261· OSTI ID:7164043

Maruyama, T; Garwin, E L ^[1]; Prepost, R; Zapalac, G H ^[2]

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1. Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309 (United States)
2. Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (United States)

Spin-polarized electron photoemission has been investigated for strained GaAs epitaxially grown on a GaAs{sub 1{minus}{ital x}}P{sub {ital x}} buffer. The lattice-mismatched heterostructure results in a highly strained epitaxial layer and significant enhancement of electron-spin polarization is observed. The effect of epitaxial layer strain is studied for a variety of samples with epitaxial-layer thicknesses varying from 0.1 to 0.3 {mu}m and the phosphorus concentration {ital x} varying from 0.21 to 0.28. Electron-spin polarization as high as 90% has been observed. The 0.3-{mu}m-thick sample, well in excess of theoretical estimates for the critical thickness for pseudomorphic growth, reaches an electron-spin polarization of 80%, demonstrating a significant persistence of lattice strain.

• DOE Contract Number: AC03-76SF00515; AC02-76ER00881
• OSTI ID: 7164043
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 46:7; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LINE DEFECTS
ORIENTATION
PHOTOEMISSION
PNICTIDES
POLARIZATION
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
SPIN ORIENTATION
STRAINS