Observation of strain-enhanced electron-spin polarization in photoemission from InGaAs

Journal Article · Mon May 06 04:00:00 EDT 1991 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.66.2376· OSTI ID:5558067

Maruyama, T; Garwin, E L ^[1]; Prepost, R; Zapalac, G H ^[2]; Smith, J S; Walker, J D ^[3]

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1. Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309 (USA)
2. Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (USA)
3. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (USA) The Electronics Research Laboratory, University of California, Berkeley, California 94720 (USA)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-{mu}m-thick epitaxial layer of In{sub {ital x}}Ga{sub 1{minus}{ital x}}As with {ital x}{approx}0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

• DOE Contract Number: AC03-76SF00515; AC02-76ER00881
• OSTI ID: 5558067
• Journal Information: Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 66:18; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
ELECTRON SOURCES
EMISSION
ENERGY DEPENDENCE
ENERGY RANGE
EPITAXY
EV RANGE
EV RANGE 01-10
EXPERIMENTAL DATA
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
NUMERICAL DATA
ORIENTATION
PARTICLE SOURCES
PHOTOEMISSION
PNICTIDES
QUANTUM EFFICIENCY
RADIATION SOURCES
SECONDARY EMISSION
SEMICONDUCTOR JUNCTIONS
SPIN ORIENTATION
STRAINS
THIN FILMS