Observation of electron polarization above 80% in photoemission from strained III-V compounds
Conference
·
OSTI ID:10132686
- Stanford Linear Accelerator Center, Menlo Park, CA (United States)
- Wisconsin Univ., Madison, WI (United States). Dept. of Physics
Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained In{sub x}Ga{sub 1-x}As epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs{sub 1-x}P{sub x} buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed.
- Research Organization:
- Stanford Linear Accelerator Center, Menlo Park, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00515; AC02-76ER00881
- OSTI ID:
- 10132686
- Report Number(s):
- SLAC-PUB--5751; CONF-9203100--1; ON: DE92009482
- Country of Publication:
- United States
- Language:
- English
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