Observation of electron polarization above 80% in photoemission from strained III-V compounds

Conference · Sat Feb 01 04:00:00 EST 1992

OSTI ID:5629701

Garwin, E L; Maruyama, T ^[1]; Prepost, R; Zapalac, G H ^[2]

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1. Stanford Linear Accelerator Center, Menlo Park, CA (United States)
2. Wisconsin Univ., Madison, WI (United States). Dept. of Physics

Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained In{sub x}Ga{sub 1-x}As epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs{sub 1-x}P{sub x} buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed.

• Research Organization: Stanford Linear Accelerator Center, Menlo Park, CA (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00515; AC02-76ER00881
• OSTI ID: 5629701
• Report Number(s): SLAC-PUB-5751; CONF-9203100--1; ON: DE92009482
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
43 PARTICLE ACCELERATORS
430301* -- Particle Accelerators-- Ion Sources
ACCELERATORS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRON SOURCES
EMISSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LINEAR ACCELERATORS
ORIENTATION
PARTICLE SOURCES
PHOTOEMISSION
PNICTIDES
POLARIZATION
POLARIZED BEAMS
RADIATION SOURCES
SECONDARY EMISSION
SPIN ORIENTATION
SURFACE COATING