Applied research on II-VI compound materials for heterojunction solar cells. Quarterly progress report, January 1--March 31, 1975

Technical Report · Tue Apr 01 04:00:00 EDT 1975

OSTI ID:7351967

Bube, R H; Fahrenbruch, A; Buch, F; Mitchell, K; Champion, R

A model has been developed for the ohmic low-resistivity Ni contact to p-CdTe etched by K/sub 2/Cr/sub 2/O/sub 7/:H/sub 2/SO/sub 4/:H/sub 2/O, which involves the formation of a thin layer of Te at the surface, followed by diffusion of the Te into the CdTe upon heat treatment to form a p/sup +/ layer. Auger analysis supports this model, showing an abrupt junction between Ni and p-CdTe when ohmic, and formation of tellurides when non-ohmic because of over-heating. Fabrication of transparent conducting films has been initiated with application to the CdS film as the intended goal. The high vacuum evaporator is ready to be used for the evaporation of CdS and CdTe films. Three cells of p-ZnTe/n-CdSe have been prepared by CSVT deposition of CdSe, indicating a quantum efficiency possible of at least 0.5.

• Research Organization: Stanford Univ., Calif. (USA). Dept. of Materials Science and Engineering
• OSTI ID: 7351967
• Report Number(s): NSF/RANN/SE/GI-38445X/PR/75/1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CADMIUM SULFIDE SOLAR CELLS
CADMIUM TELLURIDE SOLAR CELLS
CHALCOGENIDES
DEPOSITION
DIFFUSION
DIRECT ENERGY CONVERTERS
EVAPORATION
FABRICATION
JUNCTIONS
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES