Applied research on II-VI compound materials for heterojunction solar cells. Semi-annual progress report, 1 Jan--30 Jun 1975

Technical Report · Tue Jul 01 04:00:00 EDT 1975

OSTI ID:7343873

Bube, R H; Fahrenruch, A; Aranovich, J; Buch, F; Chu, M

Detailed analysis has been begun on the junction characteristics of p-CdTe/n-CdS heterojunctions, Ni metallic contacts to p-CdTe, and p-ZnTe/n-CdSe heterojunctions. Temperature measurements in the dark of J-V characteristics for p-CdTe/n-CdS indicate a higher-temperature regime in which J/sub 0/ is controlled by a thermally activated current with activation energy of 0.51 eV, and a lower-temperature regime in which J/sub 0/ is controlled by a tunneling current. Temperature measurements of the contact properties of Ni on an etched p-CdTe surface show that the contact, which is ohmic and low-resistance at room temperature on 5.6 ohm-cm material, becomes strongly non-ohmic when the CdTe resistivity exceeds 10 ohm-cm. All the data on such contacts confirm a model involving a thin Schottky barrier with current transport dominated by tunneling. (GRA)

• Research Organization: Stanford Univ., Calif. (USA). Dept. of Materials Science and Engineering
• OSTI ID: 7343873
• Report Number(s): PB-252891; NSF/RANN/SE/GI-38445X/PR/75/2
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM TELLURIDES
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTS
METALS
NICKEL
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
SOLAR CELLS
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENTS
ZINC COMPOUNDS
ZINC TELLURIDES