Applied research on II-VI compound materials for heterojunction solar cells. Quarterly progress report, 1 Jul--30 Sep 1975

Technical Report · Wed Oct 01 04:00:00 EDT 1975

OSTI ID:7138557

Bube, R H; Fahrenbruch, A; Aranovich, J; Buch, F; Chu, M

Sufficient data to construct a band diagram for the n-CdSe/p-ZnTe solar cell have been obtained. A diffusion potential for the cell of about 1.27 eV was measured suggesting a CdSe electron affinity of about 4.28 eV. A model for the heterojunction is presented in which current transport through interface states is dominant. The bias dependence of the collection efficiency shows that the small hole diffusion length in the CdSe is the principle limitation on the performance of the CdSe/ZnTe cell. CdS films on quartz substrates with a bulk resistivity of 2 ohm cm and good optical transparency, suitable for solar cell use, have been produced by vacuum evaporation. Research directed towards producing ohmic contacts to p-CdTe by ion implantation has isolated the effects of each of the preparation steps (pre-etching, ion implantation, and vacuum, Cd, and H/sub 2/ anneals). (GRA)

• Research Organization: Stanford Univ., Calif. (USA). Dept. of Materials Science and Engineering
• OSTI ID: 7138557
• Report Number(s): PB-252892; NSF/RANN/SE/AER-75-1679/75/3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CADMIUM SULFIDES
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
INORGANIC PHOSPHORS
JUNCTIONS
PERFORMANCE
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES