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U.S. Department of Energy
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Photoelectronic properties of II-VI heterojunctions. Progress report No. 1, September 1, 1976--March 31, 1977

Technical Report ·
OSTI ID:7089329
The principal achievements leading up to the beginning of this program are the development and understanding of n-CdS/p-CdTe heterojunctions prepared by the deposition of thin films of CdS by vacuum evaporation or spray pyrolysis on single crystal CdTe substrates. Solar efficiencies in the range of 6 to 8 percent have been achieved to date. In addition to continuing research on a high-efficiency all-thin-film n-CdS/p-CdTe solar cell, a number of other applications of II-VI materials in heterojunctions are being investigated. ZnSe films have been deposited by vacuum evaporation and heat-treated in Zn to bring them to the desired conductivity for solar cell applications. An n-ZnSe/p-GaAs diode showing photovoltaic properties has been prepared; this is a system with very small lattice mismatch. Ohmic contacts to 90 ohm-cm p-CdTe have been prepared using a p-Cu/sub 2/Te layer. Using these contacts an n-ITO/p-CdTe heterojunction has been shown to exhibit photovoltaic properties worthy of further investigation. ZnCdS films have been prepared over the whole solid-solution range by spray pyrolysis and their resistivities measured. Investigation has begun on the comparison of thin-film Cu/sub 2/S/CdS heterojunction cells with analogous cells prepared with single crystal CdS. Properties of ITO films under H/sub 2/ heat treatment have been determined to prepare for the use of ITO films as transparent coatings on the CdS.
Research Organization:
Stanford Univ., Calif. (USA). Dept. of Materials Science and Engineering
OSTI ID:
7089329
Report Number(s):
SU-326P47X1
Country of Publication:
United States
Language:
English