Photoelectronic properties of II-VI heterojunctions. Progress report No. 1, September 1, 1976--March 31, 1977
Technical Report
·
OSTI ID:7089329
The principal achievements leading up to the beginning of this program are the development and understanding of n-CdS/p-CdTe heterojunctions prepared by the deposition of thin films of CdS by vacuum evaporation or spray pyrolysis on single crystal CdTe substrates. Solar efficiencies in the range of 6 to 8 percent have been achieved to date. In addition to continuing research on a high-efficiency all-thin-film n-CdS/p-CdTe solar cell, a number of other applications of II-VI materials in heterojunctions are being investigated. ZnSe films have been deposited by vacuum evaporation and heat-treated in Zn to bring them to the desired conductivity for solar cell applications. An n-ZnSe/p-GaAs diode showing photovoltaic properties has been prepared; this is a system with very small lattice mismatch. Ohmic contacts to 90 ohm-cm p-CdTe have been prepared using a p-Cu/sub 2/Te layer. Using these contacts an n-ITO/p-CdTe heterojunction has been shown to exhibit photovoltaic properties worthy of further investigation. ZnCdS films have been prepared over the whole solid-solution range by spray pyrolysis and their resistivities measured. Investigation has begun on the comparison of thin-film Cu/sub 2/S/CdS heterojunction cells with analogous cells prepared with single crystal CdS. Properties of ITO films under H/sub 2/ heat treatment have been determined to prepare for the use of ITO films as transparent coatings on the CdS.
- Research Organization:
- Stanford Univ., Calif. (USA). Dept. of Materials Science and Engineering
- OSTI ID:
- 7089329
- Report Number(s):
- SU-326P47X1
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Conference
·
Fri Dec 31 23:00:00 EST 1976
· SPIE Semin. Proc.; (United States)
·
OSTI ID:5909828
Photoelectronic properties of II-VI heterojunctions. Progress report No. 2, April 1, 1977-February 28, 1978
Technical Report
·
Sat Dec 31 23:00:00 EST 1977
·
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·
Tue Feb 28 23:00:00 EST 1978
· J. Appl. Phys.; (United States)
·
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM SULFIDES
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER COMPOUNDS
COPPER SULFIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FABRICATION
INORGANIC PHOSPHORS
JUNCTIONS
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SPRAY COATING
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
ZINC SELENIDES
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM SULFIDES
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER COMPOUNDS
COPPER SULFIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FABRICATION
INORGANIC PHOSPHORS
JUNCTIONS
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SPRAY COATING
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
ZINC SELENIDES