Investigation of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors

Journal Article · Sun Oct 31 23:00:00 EST 1976 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.322501· OSTI ID:7347516

Tokuda, Y; Usami, A

Defects introduced in silicon by neutron irradiation were investigated by measuring the phase angle theta of the small-signal transconductance of the junction field-effect transistors (JFET). Measurements of theta as a function of frequency allowed the determination of the time constant for each defect. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.19 and E/sub v/+0.35 eV in p-type silicon and E/sub c/-0.16, E/sub c/-0.19, and E/sub c/-0.44 eV in n-type silicon were obtained. For these defects, calculations gave majority-carrier capture cross-section values of 2.8 x 10/sup -15/ and 1.1 x 10/sup -14/ cm/sup 2/ in p-type silicon, and 3.9 x 10/sup -14/, 1.6 x 10/sup -16/, and 2.3 x 10/sup -14/ cm/sup 2/ in n-type silicon, respectively. Comparing with other published data, it was found that the energy level of E/sub c/-0.44 eV showed the value between the previously reported energy levels of E/sub c/-0.4 and E/sub c/-0.5 eV correlated with the doubly negative charge state and singly negative charge state of the divacancy, respectively. Thus, it is believed that a total of six energy levels are introduced in silicon by neutron irradiation. The energy levels of E/sub c/-0.16 and E/sub v/+0.35 eV were found to be correlated with the A center and the divacancy, respectively. (AIP)

• Research Organization: Department of Electronics, Aichi Institute of Technology, Yagusa, Toyota, Japan
• OSTI ID: 7347516
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 47:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BEAMS
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY LEVELS
FIELD EFFECT TRANSISTORS
FREQUENCY DEPENDENCE
IRRADIATION
JUNCTION TRANSISTORS
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS
TRAPS
VACANCIES