Studies of defects in neutron-irradiated p-type silicon by admittance measurements of n/sup +/-p diodes
Defects introduced in p-type silicon by neutron irradiation were studied by measuring the admittance of n/sup +/-p diodes. It was shown that the energy levels and capture cross sections estimated from the temperature dependence of the admittance had some uncertainty due to the temperature dependence of the concentration of free carriers in the bulk and the high-frequency-junction capacitance. So, we presented the method of determination of the energy levels, capture cross sections, and concentrations of defects from the frequency dependence of the admittance. This method consists of the measurements of G/..omega.. and C as a function of frequency. From this method, assuming that capture cross sections are independent of temperature, the energy levels of E/sub v/+0.16 and E/sub v/+0.36 eV were obtained. For these defects, the calculated values of the hole capture cross section were 2.4 x 10/sup -14/ and 3.7 x 10/sup -14/ cm/sup 2/, respectively. Comparing with other published data, the energy level of E/sub v/+0.36 eV was found to be correlated with the divacancy.
- Research Organization:
- Department of Electronics, Aichi Institute of Technology, Yagusa, Toyota, Japan
- OSTI ID:
- 5211651
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ATOMIC IONS
BEAMS
BORON IONS
CHARGE CARRIERS
CHARGED PARTICLES
CROSS SECTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY LEVELS
FREQUENCY DEPENDENCE
IONS
IRRADIATION
JUNCTION DIODES
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PHOSPHORUS IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TRAPS