Admittance spectroscopy of solar cells based on GaPNAs layers

Journal Article · Wed Apr 15 04:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615040053· OSTI ID:22469979

Gudovskikh, A. S.; Zelentsov, K. S.; Nikitina, E. V.; Egorov, A. Yu. ^[1]

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1. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Center (Russian Federation)

Admittance spectroscopy is used to study defect levels in the layers of a GaPNAs quaternary solid solution. Centers with an activation energy of 0.22 eV and a capture cross section of ∼2.4 × 10{sup −15} cm{sup 2} are found in doped n-GaPNAs layers grown on GaP substrates. These centers correspond to already known Si{sub Ga} + V{sub P} defects in n-GaP; annealing decreases their concentration by several times. A level with an activation energy of 0.23–0.24 eV and capture cross section of ∼9.0 × 10{sup −20} cm{sup 2} is found in undoped GaPNAs layers grown on Si and GaP substrates. The concentration of these centers substantially decreases upon annealing, and, at annealing temperatures exceeding 600°C, there is absolutely no response from these defects. For undoped GaPNAs layers grown on GaP substrates, a level with an activation energy of 0.18 eV and capture cross section of ∼1.1 × 10{sup −16} cm{sup 2} is also found. The concentration of these centers remains unchanged upon annealing.

• OSTI ID: 22469979
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANNEALING
ARSENIDES
CAPTURE
CONCENTRATION RATIO
CROSS SECTIONS
DOPED MATERIALS
EV RANGE
GALLIUM PHOSPHIDES
LAYERS
NITRIDES
SILICON
SOLAR CELLS
SOLID SOLUTIONS
SPECTROSCOPY
SUBSTRATES