Deep level transient spectroscopy and admittance spectroscopy of Si{sub 1-x}Ge{sub x}/Si grown by gas-source molecular-beam epitaxy
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Univ. of Michigan, Ann Arbor, MI (United States); and others
Deep levels and measured band discontinuities in Si/SiGe heterostructures grown by gas-source molecular-beam epitaxy have been identified. Hole traps in the p-type, undoped, single layers of Si{sub 1-x}Ge{sub x}(0.05{le}x{le}0.26) have activation energies ranging from 0.029 to 0.45 eV and capture cross sections ({sigma}{sub infinity}) ranging from 10{sup {minus}9} to 10{sup {minus}20} cm{sup 2}. Possible origins of these centers are discussed. It is found from admittance spectroscopy measurements that the band discontinuity is almost entirely in the valence band for 0
- OSTI ID:
- 147036
- Report Number(s):
- CONF-9210296--; CNN: Grant AFOSR-91-0349
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
Similar Records
Strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates
Vacancy-impurity pairs in relaxed Si{sub 1-x}Ge{sub x} layers studied by positron annihilation spectroscopy
Dielectric response of strained and relaxed Si{sub 1{minus}{ital x}{minus}{ital y}}Ge{sub {ital x}}C{sub {ital y}} alloys grown by molecular beam epitaxy on Si(001)
Journal Article
·
Sun Jan 01 23:00:00 EST 2006
· Applied Physics Letters
·
OSTI ID:20778528
Vacancy-impurity pairs in relaxed Si{sub 1-x}Ge{sub x} layers studied by positron annihilation spectroscopy
Journal Article
·
Sat Apr 15 00:00:00 EDT 2006
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:20788080
Dielectric response of strained and relaxed Si{sub 1{minus}{ital x}{minus}{ital y}}Ge{sub {ital x}}C{sub {ital y}} alloys grown by molecular beam epitaxy on Si(001)
Journal Article
·
Tue Oct 01 00:00:00 EDT 1996
· Journal of Applied Physics
·
OSTI ID:389019