Admittance studies of neutron-irradiated silicon p/sup +/-n diodes
Defects introduced in n-type silicon by neutron irradiation were investigated by measuring the conductance (G) and the capacitance (C) of p/sup +/-n diodes. The method of the determination of the energy level, capture cross section, and concentration for each defect from the G-T and C-T curves for various frequencies was presented. Assuming that capture cross sections are independent of temperature, the energy levels of E/sub c/-0.15 eV, E/sub c/-0.22 eV, and E/sub c/-0.39 eV were obtained. For these defects, the calculated values of the electron capture cross section were 2.6 x 10/sup -14/, 3.7 x 10/sup -15/, and 2.0 x 10/sup -14/ cm/sup 2/, respectively. The introduction rate of defects for E/sub c/-0.39 eV was twice that for E/sub c/-0.22 eV which was twice that for E/sub c/-0.15 eV. Comparing with other published data, the energy levels of E/sub c/-0.15 eV and E/sub c/-0.39 eV were found to be correlated with the A center and the divacancy, respectively.
- Research Organization:
- Department of Electronics, Aichi Institute of Technology, Yagusa, Toyota, Japan
- OSTI ID:
- 7120682
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BEAMS
CAPTURE
CROSS SECTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRON CAPTURE
ELEMENTS
ENERGY LEVELS
IRRADIATION
JUNCTION DIODES
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
SILICON DIODES