Studies of annealing of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors

Journal Article · Sun Jan 01 00:00:00 EST 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324319· OSTI ID:5242679

Tokuda, Y; Usami, A

Annealing behavior of neutron-produced defects in silicon was studied by measuring the phase angle theta of the small-signal transconductance of the junction field-effect transistors (JFET's). Three deep levels (N-1, N-2, and N-3 levels) in n-type silicon and two deep levels (P-1 and P-2 levels) in p-type silicon, introduced by irradiation, annealed gradually. Their energy levels and capture cross sections have been already reported by us. Three deep levels (P-3, P-4, and P-5 levels) were observed in annealed p-type silicon in the temperature range 150--300 /sup 0/C. For these defects, theta was measured as a function of frequency to obtain the time constant. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of P-3, P-4, and P-5 were estimated to be E/sub v/+0.21, E/sub v/+0.40, and E/sub v/+0.30 eV, respectively. The calculated hole capture cross sections of these levels were 2.2 x 10/sup -15/, 8.7 x 10/sup -14/, and 1.2 x 10/sup -14/ cm/sup 2/, respectively. Comparison with other published data was made. It was found that N-3 and P-2 levels corresponded to the divacancy. Furthermore, it seemed that P-3, P-4, and P-5 levels corresponded to the high-order vacancy defects.

• Research Organization: Department of Electronics, Aichi Institute of Technology, Yagusa, Toyota, Japan
• OSTI ID: 5242679
• Journal Information: J. Appl. Phys.; (United States), Vol. 49:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
ANNEALING
CRYSTAL DEFECTS
ENERGY LEVELS
FIELD EFFECT TRANSISTORS
IRRADIATION
JUNCTION TRANSISTORS
NEUTRON BEAMS
BEAMS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
NUCLEON BEAMS
PARTICLE BEAMS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
TRANSISTORS
360605* - Materials- Radiation Effects