Application of MOS hardening techniques to bipolar device processing. Final report 15 May 1974--15 May 1975

Technical Report · Tue Jul 01 00:00:00 EDT 1975

OSTI ID:7334097

Crabbe, J S

741 Type operational amplifiers and test bars containing the input npn and lateral pnp transistor of the amplifier were fabricated by several processes which applied where possible techniques developed for hardening MOS transistors to ionizing radiation. The process variations considered included oxide growth conditions, annealing cycles and methods for aluminum evaporation. Data are presented which describes the hFE of the vertical npn and lateral pnp transistor on the test bar as a function of collector current and /sup 60/Co dose for each device process variation. The effect of /sup 60/Co irradiation on the input bias currents and offset voltage of amplifiers irradiated in an input-stressed and a unity-gain configuration is described. The improvement in total ionizing dose hardness which was achieved was dependent on the parameter used for comparison, the bias condition of the amplifier during irradiation, and the magnitude of the parameter at which the comparison was made. At total doses of less than 300,000 rads(Si) a typical improvement in radiation tolerance of 1.5-3.0 was achieved for amplifier input bias current and the hFE(IC /sup +/ 1,10 microamp) of the npn and lateral pnp transistors. (GRA)

• Research Organization: Texas Instruments, Inc., Dallas (USA)
• OSTI ID: 7334097
• Report Number(s): AD-A-018363; TI-03-75-34
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
ANNEALING
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
GAMMA RADIATION
HARDENING
HEAT TREATMENTS
IONIZING RADIATIONS
OPERATIONAL AMPLIFIERS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS