Total dose effects in conventional bipolar transistors and linear integrated circuits

Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6558985

Johnston, A H; Swift, G M; Rax, B G ^[1]

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1. California Inst. of Technology, Pasadena, CA (United States). Jet Propulsion Lab.

Total dose damage is investigated for discrete bipolar transistors and linear integrated circuits that are fabricated with older processing technologies, but are frequently used in space applications. The Kirk effect limits the current density of discrete transistors with high collector breakdown voltage, increasing their sensitivity to ionizing radiation because they must operate low injection levels. Bias conditions during irradiation had different effects on discrete and integrated circuit transistors: discrete devices were strongly dependence on bias conditions, whereas damage in the linear ICs was nearly the same with or without bias. There were also large differences in the response of these devices at low dose rates. None of the discrete transistors exhibited enhanced damage at low dose rates, whereas substantially more damage occurred in the linear devices under low dose rate conditions, particularly for parameters that rely directly on pnp transistors. The threshold for dose rate effects in pnp transistors was about 0.01 rad(Si)/s, which is approximately two orders of magnitude lower than the corresponding threshold for npn transistors in integrated circuits.

• OSTI ID: 6558985
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
INTEGRATED CIRCUITS
JUNCTION TRANSISTORS
MICROELECTRONIC CIRCUITS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SPACE FLIGHT
TRANSISTORS