Hardness-assurance issues for lateral PNP bipolar junction transistors
- Univ. of Arizona, Tucson, AZ (United States)
- Sandia National Labs., Albuquerque, NM (United States)
- RLP Research, Albuquerque, NM (United States)
- Naval Surface Warfare Center, Crane, IN (United States)
- Analog Devices, Inc., Wilmington, MA (United States)
The dose-rate dependence of gain degradation in lateral PNP transistors is even stronger than the dependence previously reported for NPN BJTs. In this work, several hardness-assurance approaches are examined and compared to experimental results obtained at low dose rates. The approaches considered include irradiation at high dose rates while at elevated temperature and high-dose-rate irradiation followed by annealing. The lateral PNP transistors continue to degrade during post-irradiation annealing, in sharp contrast to NPN devices studied previously. High-temperature conditions significantly increase the degradation during high-dose-rate irradiation, with the amount of degradation continuing to increase with temperature throughout the range studied here (up to 125 C). The high-temperature degradation is nearly as great as that observed at very low dose rates, and is even greater when differences between {sup 60}Co and x-ray irradiation are accounted for. Since high-temperature irradiation has previously been shown to enhance the degradation in NPN transistors, this appears to be a promising hardness-assurance approach for bipolar integrated circuits. Based on these results, preliminary testing recommendations are discussed.
- OSTI ID:
- 203684
- Report Number(s):
- CONF-950716--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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