Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors
Conference
·
OSTI ID:522749
- Aerospace Corp., Los Angeles, CA (United States). Electronics Technology Center
- Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical and Computer Engineering; and others
The effect of dose rate on radiation-induced gain degradation is compared for verticle npn and lateral pnp bipolar transistors. High dose rate irradiations at elevated temperatures are more effective at simulating low dose rate degradation in the lateral pnp transistors.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 522749
- Report Number(s):
- SAND--97-0493C; CONF-970711--3; ON: DE97004377
- Country of Publication:
- United States
- Language:
- English
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