Accelerated tests for bounding the low dose rate radiation response of lateral PNP bipolar junction transistors

Conference · Thu Feb 29 23:00:00 EST 1996

OSTI ID:241505

Witczak, S C; Schrimpf, R D; Galloway, K F; Schmidt, D M ^[1]; Fleetwood, D M ^[2]; Pease, R L ^[3]; Coombs, W E ^[4]; Suehle, J S ^[5]

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1. Arizona Univ., Tucson, AZ (United States). Dept. of Electrical Engineering
2. Sandia National Labs., Albuquerque, NM (United States)
3. RLP Research, Inc., Albuquerque, NM (United States)
4. Naval Surface Warfare Center, Crane, IN (United States). Crane Div.
5. National Inst. of Standards and Technology (NEL), Gaithersburg, MD (United States). Semiconductor Electronics Div.

Low dose rate gain degradation of lateral pnp bipolar transistors can be simulated by accelerated irradiations performed at approximately 135 degrees C. Degradation enhancement is explained by temperature- dependent radiation-induced interface trap formation above the transistor`s base.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 241505
• Report Number(s): SAND--96-0563C; CONF-960773--2; ON: DE96006384; CNN: Contract DNA001-92-C-0022
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DOSE RATES
GAIN
JUNCTION TRANSISTORS
LOSSES
LOW DOSE IRRADIATION
RADIATION EFFECTS
RADIATION HARDENING
RESPONSE FUNCTIONS
SEMICONDUCTOR JUNCTIONS
TEMPERATURE DEPENDENCE