The origin of dislocation climb during laser operation

Journal Article · Fri Apr 15 04:00:00 EST 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89432· OSTI ID:7330406

O'Hara, S; Hutchinson, P W; Dobson, P S

The origin of the dislocation climb which takes place in the presence of electron-hole recombination in laser structuresis discussed. TEM studies on lasers which have been degraded by either forward bias or by optical pumping show that the climb dipoles are extrinsic in both cases. In addition, completely isolated interstitial loops can form which also have the characteristic climb appearance of the larger dipoles. Existing theories for the origin of the interstitials required to account for the observed climb are considered in detail, and it is concluded that the climb structures can best be explained by the emission of both gallium and arsenic vacancies from the dislocation as a consequence of nonradiative processes occurring at the dislocation core.

• Research Organization: Post Office Research Centre, Martlesham Heath, Ipswich IP5 7RE England
• OSTI ID: 7330406
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 30:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
DISLOCATIONS
ELECTROLUMINESCENCE
ELECTRON MICROSCOPY
INTERSTITIALS
JUNCTION DIODES
LASERS
LINE DEFECTS
LUMINESCENCE
MICROSCOPY
OPTICAL PUMPING
PERFORMANCE
POINT DEFECTS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
VACANCIES