Secondary dislocation climb during optical excitation of GaAs laser material
Dislocation glide and climb during optical excitation of GaAs laser material have been studied. A dislocation which has been induced to glide under high excitation can be induced to climb by reducing the incident excitation. The climb proceeds in a distinctly different crystallographic direction to, and at a rate which is five or six orders of magnitude slower than, the glide. Furthermore, only the threading portion of the dislocation experiences climb, a misfit dislocation excited at the same external intensity for the same time undergoes no discernible growth. Transmission electron microscopy examination of the climb region shows that it consists of a highly convoluted giant dislocation dipole. The nature of this giant dipole has been determined by a calibrated technique and it has been shown to grow by vacancy climb. Small coherent precipitate particles have been identified for the first time in the neighborhood of the giant dipole.
- Research Organization:
- IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
- OSTI ID:
- 6938385
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Climb and Glide Dislocation Sources in Quenched Aluminum Alloys
Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
ENERGY-LEVEL TRANSITIONS
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LINE DEFECTS
MICROSCOPY
PERFORMANCE
PNICTIDES
PRECIPITATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEPARATION PROCESSES