Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Mukherjee, Kunal; Selvidge, Jennifer; Jung, Daehwan; Norman, Justin; Taylor, Aidan A.; Salmon, Mike; Liu, Alan Y.; Bowers, John E.; Herrick, Robert W.

doi:10.1063/1.5143606

Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Journal Article · Tue Jul 14 00:00:00 EDT 2020 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5143606· OSTI ID:1803987

^[1]; ^[2]; Jung, Daehwan ^[3]; Norman, Justin ^[2]; Taylor, Aidan A. ^[2]; Salmon, Mike ^[4]; Liu, Alan Y. ^[5]; Bowers, John E. ^[2]; Herrick, Robert W. ^[6]

Univ. of California, Santa Barbara, CA (United States); OSTI
Univ. of California, Santa Barbara, CA (United States)
Korea Inst. of Science and Technology, Seoul (Korea, Republic of)
EAG Laboratories, Raleigh, NC (United States)
Quintessent Inc., Santa Barbara, CA (United States)
Intel Corporation, Santa Clara, CA (United States)

Here, we analyze the structure of dislocations in electrically aged InAs quantum dot (QD) lasers on silicon to understand gradual device degradation. We find that misfit dislocations lengthen due to carrier injection, experiencing a combination of recombination-enhanced climb and glide processes constrained by the epitaxial structure. An examination of the dislocation geometry reveals that the climb process involves the addition of atoms to the extra half plane of the dislocation. Spontaneous emission from the QDs is also dimmer after aging. Additionally, the signature of misfit dislocations in the unaged laser, discernible as sharp dark lines in spatially resolved cathodoluminescence, is replaced by finer, more inhomogeneous contrast upon aging. We speculate that this change arises from vacancy clouds expelled from the dislocation during climb. With this insight, we evaluate the driving forces for dislocation climb that could be at play and discuss the origins of slow degradation in QD lasers.

View Accepted Manuscript (DOE)

Research Organization:: Columbia Univ., New York, NY (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000843

OSTI ID:: 1803987

Alternate ID(s):: OSTI ID: 1638413

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 128; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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