Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

Selvidge, Jennifer; Norman, Justin; Salmon, Michael E.; Hughes, Eamonn T.; Bowers, John E.; Herrick, Robert; Mukherjee, Kunal

doi:10.1063/1.5113517

Title: Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

Journal Article · Mon Sep 23 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5113517· OSTI ID:1613736

Selvidge, Jennifer ^[1]; Norman, Justin ^[1]; Salmon, Michael E. ^[2];

^[1]; Bowers, John E. ^[3]; Herrick, Robert ^[4];

^[1]

Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA
EAG Laboratories–Eurofins Materials Science, 628 Hutton St., Suite 103, Raleigh, North Carolina 27606, USA
Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, USA; Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106, USA
Intel Corporation, Santa Clara, California 95054, USA

We study the impact of misfit dislocations on the luminescence from InAs quantum dots (QDs) grown on Si substrates. Electron channeling contrast imaging is used together with cathodoluminescence mapping to locate misfit dislocations and characterize the resulting nonradiative recombination of carriers via near-infrared light emission profiles. With a 5 kV electron beam probe, the dark line defect width due to a typical misfit dislocation in a shallow QD active layer is found to be approximately 1 μm, with a 40%–50% peak emission intensity loss at room temperature. Importantly, we find that at cryogenic temperatures, the dislocations affect the QD ground state and the first excited state emission significantly less than the second excited state emission. At the same time, the dark line defect width, which partially relates to carrier diffusion in the system, is relatively constant across the temperature range of 10 K–300 K. Our results suggest that carrier dynamics in the QD wetting layer control emission intensity loss at dislocations, and that these defects reduce luminescence only at those temperatures where the probability of carriers thermalizing from the dots into the wetting layer becomes significant. We discuss the implications of these findings toward growing dislocation-tolerant, reliable quantum dot lasers on silicon.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Columbia Univ., New York, NY (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000843; AR00000843

OSTI ID:: 1613736

Alternate ID(s):: OSTI ID: 1566273

Journal Information:: Applied Physics Letters, Vol. 115, Issue 13; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 25 works

Citation information provided by
Web of Science

References (45)

High performance continuous wave 1.3 μ m quantum dot lasers on silicon Liu, Alan Y.; Zhang, Chong; Norman, Justin Applied Physics Letters, Vol. 104, Issue 4 https://doi.org/10.1063/1.4863223	journal	January 2014
All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001) Kwoen, Jinkwan; Jang, Bongyong; Lee, Joohang Optics Express, Vol. 26, Issue 9 https://doi.org/10.1364/OE.26.011568	journal	January 2018
Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds Matthews, J. W.; Mader, S.; Light, T. B. Journal of Applied Physics, Vol. 41, Issue 9 https://doi.org/10.1063/1.1659510	journal	August 1970
Radiation Enhanced Dislocation Glide and Rapid Degradation Maeda, K.; Yamashita, Y.; Maeda, N. MRS Proceedings, Vol. 184 https://doi.org/10.1557/PROC-184-69	journal	January 1990
Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy Jung, Daehwan; Norman, Justin; Wan, Yating physica status solidi (a), Vol. 216, Issue 1 https://doi.org/10.1002/pssa.201800602	journal	December 2018
Room‐temperature continuous operation of p ‐ n Al _x Ga _{1− x} As‐GaAs quantum well heterostructure lasers grown on Si Deppe, D. G.; Holonyak, N.; Nam, D. W. Applied Physics Letters, Vol. 51, Issue 9 https://doi.org/10.1063/1.98371	journal	August 1987
Fermi-dirac and random carrier distributions in quantum dot lasers Hutchings, M.; O'Driscoll, I.; Smowton, P. M. Applied Physics Letters, Vol. 104, Issue 3 https://doi.org/10.1063/1.4862813	journal	January 2014
Photonic Integration With Epitaxial III–V on Silicon Liu, Alan Y.; Bowers, John IEEE Journal of Selected Topics in Quantum Electronics, Vol. 24, Issue 6 https://doi.org/10.1109/JSTQE.2018.2854542	journal	November 2018
Femtosecond pulse generation in passively mode locked InAs quantum dot lasers Finch, P.; Blood, P.; Smowton, P. M. Applied Physics Letters, Vol. 103, Issue 13 https://doi.org/10.1063/1.4822433	journal	September 2013
Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers Hu, S. Y.; Corzine, S. W.; Law, K. ‐K. Journal of Applied Physics, Vol. 76, Issue 8 https://doi.org/10.1063/1.357279	journal	October 1994
Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers Buffolo, Matteo; Samparisi, Fabio; De Santi, Carlo IEEE Journal of Quantum Electronics, Vol. 55, Issue 3 https://doi.org/10.1109/JQE.2019.2909963	journal	June 2019
Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates van der Ziel, J. P.; Dupuis, R. D.; Logan, R. A. Applied Physics Letters, Vol. 51, Issue 2 https://doi.org/10.1063/1.98997	journal	July 1987
Lateral carrier confinement in miniature lasers using quantum dots Kim, J. K.; Naone, R. L.; Coldren, L. A. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 6, Issue 3 https://doi.org/10.1109/2944.865105	journal	May 2000
Exciton dynamics probe the energy structure of a quantum dot-in-a-well system: The role of Coulomb attraction and dimensionality Kolarczik, Mirco; Owschimikow, Nina; Herzog, Bastian Physical Review B, Vol. 91, Issue 23 https://doi.org/10.1103/PhysRevB.91.235310	journal	June 2015
Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition Kazi, Zaman Iqbal; Thilakan, Periyasamy; Egawa, Takashi Japanese Journal of Applied Physics, Vol. 40, Issue Part 1, No. 8 https://doi.org/10.1143/JJAP.40.4903	journal	August 2001
Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dots Fiore, A.; Rossetti, M.; Alloing, B. Physical Review B, Vol. 70, Issue 20 https://doi.org/10.1103/PhysRevB.70.205311	journal	November 2004
Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids Grundmann, M.; Heitz, R.; Ledentsov, N. Superlattices and Microstructures, Vol. 19, Issue 2 https://doi.org/10.1006/spmi.1996.0011	journal	March 1996
What is the real value of diffusion length in GaN? Yakimov, E. B. Journal of Alloys and Compounds, Vol. 627 https://doi.org/10.1016/j.jallcom.2014.11.229	journal	April 2015
Plastic relaxation and relaxed buffer layers for semiconductor epitaxy Beanland, R.; Dunstan, D. J.; Goodhew, P. J. Advances in Physics, Vol. 45, Issue 2 https://doi.org/10.1080/00018739600101477	journal	April 1996
Theory of random population for quantum dots Grundmann, M.; Bimberg, D. Physical Review B, Vol. 55, Issue 15 https://doi.org/10.1103/PhysRevB.55.9740	journal	April 1997
Structural analysis of life tested 1.3 μm quantum dot lasers Beanland, R.; Sánchez, A. M.; Childs, D. Journal of Applied Physics, Vol. 103, Issue 1 https://doi.org/10.1063/1.2827451	journal	January 2008
Dislocation filters in GaAs on Si George, I.; Becagli, F.; Liu, H. Y. Semiconductor Science and Technology, Vol. 30, Issue 11 https://doi.org/10.1088/0268-1242/30/11/114004	journal	October 2015
Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers Groenert, Michael E.; Leitz, Christopher W.; Pitera, Arthur J. Journal of Applied Physics, Vol. 93, Issue 1 https://doi.org/10.1063/1.1525865	journal	January 2003
Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon Callahan, Patrick G.; Haidet, Brian B.; Jung, Daehwan Physical Review Materials, Vol. 2, Issue 8 https://doi.org/10.1103/PhysRevMaterials.2.081601	journal	August 2018
Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon Liu, Alan Y.; Herrick, Robert W.; Ueda, Osamu IEEE Journal of Selected Topics in Quantum Electronics, Vol. 21, Issue 6 https://doi.org/10.1109/JSTQE.2015.2418226	journal	November 2015
Influence of misfit dislocations on thermal quenching of luminescence in In _x Ga _{1− x} As/GaAs multiple quantum wells Rammohan, K.; Lin, H. T.; Rich, D. H. Journal of Applied Physics, Vol. 78, Issue 11 https://doi.org/10.1063/1.360491	journal	December 1995
Defect reduction effects in GaAs on Si substrates by thermal annealing Yamaguchi, Masafumi; Yamamoto, Akio; Tachikawa, Masami Applied Physics Letters, Vol. 53, Issue 23 https://doi.org/10.1063/1.100257	journal	December 1988
Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate Liu, Huiyun; Wang, Ting; Jiang, Qi Nature Photonics, Vol. 5, Issue 7 https://doi.org/10.1038/nphoton.2011.120	journal	June 2011
Quantum dot lasers for silicon photonics [Invited] Liu, Alan Y.; Srinivasan, Sudharsanan; Norman, Justin Photonics Research, Vol. 3, Issue 5 https://doi.org/10.1364/PRJ.3.0000B1	journal	January 2015
Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide Sieber, B.; Farvacque, J. L.; Miri, A. Physica Status Solidi (a), Vol. 138, Issue 2 https://doi.org/10.1002/pssa.2211380238	journal	August 1993
Random Population of Quantum Dots in InAs–GaAs Laser Structures O'Driscoll, Ian; Blood, Peter; Smowton, Peter M. IEEE Journal of Quantum Electronics, Vol. 46, Issue 4 https://doi.org/10.1109/JQE.2009.2039198	journal	April 2010
Dislocation filtering: why it works, when it doesn’t Dodson, Brian W. Journal of Electronic Materials, Vol. 19, Issue 6 https://doi.org/10.1007/BF02651270	journal	June 1990
The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices Naidu, D.; Smowton, P. M.; Summers, H. D. Journal of Applied Physics, Vol. 108, Issue 4 https://doi.org/10.1063/1.3471812	journal	August 2010
Recent progress in lasers on silicon Liang, Di; Bowers, John E. Nature Photonics, Vol. 4, Issue 8 https://doi.org/10.1038/nphoton.2010.167	journal	July 2010
Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si Jung, Daehwan; Herrick, Robert; Norman, Justin Applied Physics Letters, Vol. 112, Issue 15 https://doi.org/10.1063/1.5026147	journal	April 2018
Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers Petroff, P.; Hartman, R. L. Journal of Applied Physics, Vol. 45, Issue 9 https://doi.org/10.1063/1.1663883	journal	September 1974
Carrier thermal escape and retrapping in self-assembled quantum dots Sanguinetti, S.; Henini, M.; Grassi Alessi, M. Physical Review B, Vol. 60, Issue 11 https://doi.org/10.1103/PhysRevB.60.8276	journal	September 1999
Low threading dislocation density GaAs growth on on-axis GaP/Si (001) Jung, Daehwan; Callahan, Patrick G.; Shin, Bongki Journal of Applied Physics, Vol. 122, Issue 22 https://doi.org/10.1063/1.5001360	journal	December 2017
Origin of defect tolerance in InAs/GaAs quantum dot lasers grown on silicon Liu, Zizhuo; Martin, Mickael; Baron, Thierry Journal of Lightwave Technology https://doi.org/10.1109/JLT.2019.2925598	journal	January 2019
Carrier migration in structures with InAs quantum dots Popescu, Dan P.; Eliseev, Peter G.; Stintz, Andreas Journal of Applied Physics, Vol. 94, Issue 4 https://doi.org/10.1063/1.1594816	journal	August 2003
Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities Lee, Andrew; Jiang, Qi; Tang, Mingchu Optics Express, Vol. 20, Issue 20 https://doi.org/10.1364/OE.20.022181	journal	January 2012
Electrically pumped continuous-wave III–V quantum dot lasers on silicon Chen, Siming; Li, Wei; Wu, Jiang Nature Photonics, Vol. 10, Issue 5 https://doi.org/10.1038/nphoton.2016.21	journal	March 2016
Reliability of Hybrid Silicon Distributed Feedback Lasers Srinivasan, S.; Julian, N.; Peters, J. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 4 https://doi.org/10.1109/JSTQE.2013.2240438	journal	July 2013
Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence Zarem, H. A.; Sercel, P. C.; Lebens, J. A. Applied Physics Letters, Vol. 55, Issue 16 https://doi.org/10.1063/1.102226	journal	October 1989
Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory Stier, O.; Grundmann, M.; Bimberg, D. Physical Review B, Vol. 59, Issue 8 https://doi.org/10.1103/PhysRevB.59.5688	journal	February 1999

Similar Records

Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Journal Article · Tue Jul 14 00:00:00 EDT 2020 · Journal of Applied Physics · OSTI ID:1613736

Mukherjee, Kunal; Selvidge, Jennifer; Jung, Daehwan; +6 more

Cathodoluminescence imaging and spectroscopy of excited states in InAs self-assembled quantum dots

Journal Article · Wed Jun 15 00:00:00 EDT 2005 · Journal of Applied Physics · OSTI ID:1613736

Khatsevich, S; Rich, D H; Kim, Eui-Tae; +1 more

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Journal Article · Mon Sep 21 00:00:00 EDT 2020 · Applied Physics Letters · OSTI ID:1613736

Selvidge, Jennifer; Norman, Justin; Hughes, Eamonn T.; +7 more

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
Physics
Emission spectroscopy
Quantum dots
Luminescence
Electron beams
Lasers
Crystallographic defects
Epitaxy

Title: Non-radiative recombination at dislocations in InAs quantum dots grown on silicon

Citation Formats

References (45)

Similar Records

Related Subjects