Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

Hughes, Eamonn T.; Kusch, Gunnar; Selvidge, Jennifer; Bonef, Bastien; Norman, Justin; Shang, Chen; Bowers, John E.; Oliver, Rachel A.; Mukherjee, Kunal

doi:10.1002/pssa.202300114

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

Journal Article · Fri Jun 23 00:00:00 EDT 2023 · Physica Status Solidi. A, Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.202300114· OSTI ID:2422290

^[1]; Kusch, Gunnar ^[2]; Selvidge, Jennifer ^[3]; Bonef, Bastien ^[3]; Norman, Justin ^[3]; Shang, Chen ^[3]; Bowers, John E. ^[3]; Oliver, Rachel A. ^[2]; Mukherjee, Kunal ^[4]

Univ. of California, Santa Barbara, CA (United States); OSTI
Univ. of Cambridge (United Kingdom)
Univ. of California, Santa Barbara, CA (United States)
Stanford Univ., CA (United States)

This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic-integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time-resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three-dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch-like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

View Accepted Manuscript (DOE)

Research Organization:: Via Separations, Inc., Watertown, MA (United States)

Sponsoring Organization:: EPSRC; National Science Foundation (NSF); USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0001043

OSTI ID:: 2422290

Journal Information:: Physica Status Solidi. A, Applications and Materials Science, Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Issue: 14 Vol. 220; ISSN 1862-6300

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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