Radiation-resilient InAs quantum dot lasers

Fortuna, Seth A.; Hughes, Eamonn T.; Chow, Weng W.; Addamane, Sadhvikas; Alford, Charles; Vizkelethy, Gyorgy; Bowers, John E.; Skogen, Erik J.

doi:10.1063/5.0250182

Radiation-resilient InAs quantum dot lasers

Journal Article · Tue Apr 01 00:00:00 EDT 2025 · APL Photonics

DOI:https://doi.org/10.1063/5.0250182· OSTI ID:2544430

; ; ; ; ; ; ; Skogen, Erik J.

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

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Sponsoring Organization:: USDOE

OSTI ID:: 2544430

Alternate ID(s):: OSTI ID: 2547089

Journal Information:: APL Photonics, Journal Name: APL Photonics Journal Issue: 4 Vol. 10; ISSN 2378-0967

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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