Electron-beam-induced dislocation climb in ZnSe

Journal Article · Fri Sep 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325557· OSTI ID:7032615

Stacy, W T; Fitzpatrick, B J

Dislocations in solution-grown ZnSe were observed to climb when exposed to a focused 100-kV electron beam in an electron microscope. The resulting dislocation networks are complex and are generated in a three-step sequence: (1) existing dislocations extend their length by forming dipoles, (2) a thin layer of radiation-damaged material forms at the beam entry surface, and (3) dislocation loops originating at the damaged layer grow into the sample bulk. From a diffraction contrast analysis the loops were determined to be of the extrinsic type. From annealing experiments it is concluded that the beam-induced climb involves vacancy emission at the dislocation and that the process is energized by electron-hole recombination.

• Research Organization: Philips Laboratories, Briarcliff Manor, New York 10510
• OSTI ID: 7032615
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BEAMS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON BEAMS
ELECTRON MICROSCOPY
HEAT TREATMENTS
LEPTON BEAMS
LINE DEFECTS
MICROSCOPY
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RECOMBINATION
SELENIDES
SELENIUM COMPOUNDS
VACANCIES
ZINC COMPOUNDS
ZINC SELENIDES