Climb of dislocations in boron-ion-implanted silicon

Journal Article · Thu Sep 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324293· OSTI ID:7220047

Wu, W; Washburn, J

The climb of dislocations, both perfect (b= (1/2) <100>) and imperfect (b= (1/3) <111>), was studied in boron-implanted silicon thin foils by electron microscope observation of the shrinkage of interstitial-type dislocation loops. The temperature dependence of the climb rate gave an apparent activation energy of 5.6 +- 0.5 eV for both types. The imperfect loops adopted a rounded shape during shrinkage but tended to acquire straight segments whenever the climb motion required nucleation of new jog pairs. Climb rate at a given temperature was shown to be a function of the climb force on the dislocation and on the distance to the nearest efficient sink or source. The surfaces of the foil were shown to be relatively poor sinks for interstitials or alternatively poor sources for vacancies.

• Research Organization: University of California, Berkeley, Berkeley, California 94720
• OSTI ID: 7220047
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
360605 -- Materials-- Radiation Effects
ACTIVATION ENERGY
ANNEALING
ATOMIC IONS
BORON IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
FOILS
HEAT TREATMENTS
INTERSTITIALS
ION IMPLANTATION
IONS
LINE DEFECTS
MICROSCOPY
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
VACANCIES