Self aligned radiation hard CMOS/SOS

Conference · Wed Dec 01 04:00:00 EST 1976 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7307229

Kjar, R A; Lee, S N; Pancholy, R K; Peel, J L

This paper reports the results of extending previously reported radiation hardening methods to a self-aligned CMOS/SOS process. Over 20 lots of CMOS/SOS circuits have been fabricated with this process. Threshold shifts, after 1 Mrad (Si) Co/sup 60/ irradiation and less than or equal to 1.2V for the n-channel devices and less than or equal to 2.7V for the p-channel devices under worst case bias conditions. Several lots of devices have been fabricated with less than or equal to 0.7V n-channel shifts and less than or equal to 1.2V p-channel shifts under the above radiation and bias conditions. Post-irradiation n-channel back leakage is in the range of .05 to 5 ..mu..A per mil of channel width, the specific value dependent to a considerable extent on quality of the starting SOS material. Electrical parameters and life-test stability are excellent and equal to those obtained with similar, non-radiation-hard processes.

• Research Organization: Rockwell International Corp., Anaheim, CA
• OSTI ID: 7307229
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-23:6
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
FABRICATION
GAMMA RADIATION
HARDENING
INTEGRATED CIRCUITS
IONIZING RADIATIONS
LEAKAGE CURRENT
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
TESTING