Radiation-hardened silicon-gate CMOS/SOS
High performance, radiation hardened silicon gate CMOS/SOS circuits have been fabricated. Radiation hardness was achieved by using a low temperature (875/sup 0/C), wet-process gate oxide, and by minimizing the temperature of subsequent process steps. The need for additional temperature steps was eliminated by in-situ doping of the polysilicon gate material with boron and by using ion-implantation instead of diffusions to form source and drain regions. Radiation effects in simple inverter circuits have been measured. Threshold shifts after 10/sup 6/ rads (Si) of ionizing radiation are less than or equal to 0.5 V for n-channel transistors and less than or equal to 1.6 V for p-channel transistors. Irradiation of p-channel transistors in circuit configurations where effective positive gate voltages occur, results in a 4 V shift at 10/sup 6/ rads (Si). Ring oscillator circuits have been fabricated to measure intrinsic circuit performance. With a 15 V power supply, stage delays of 0.5 ns are achieved. These short stage delays verify the suitability of the fabrication process for high speed circuit applications.
- Research Organization:
- Rockwell International Corp., Anaheim, CA
- OSTI ID:
- 6544311
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-24:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MANUFACTURING
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TESTING
TRANSISTORS